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ADVANCED TOPICS IN ELECTRICAL ENGINEERING – ATEE 2017

Papers Proceedings »

The importance of using dual channel heterostructure in strained P-MOSFETs

We present in this work a dual channel heterostructure strained structure, introduce the high carrier mobility Awaited in heterostructure devices while using several models which are : CVT, SHIRAHATA and WATT, we present a two dimensional simulation of strained-Si/Strained-SiGe dual channel heterostructure P-MOSFETs (Metal-Oxide-Semiconductor-Field-Effect-Transistor) . This study is accomplished using SILVACO-TCAD simulation software, the comparison of the effect of using strained silicon technology on P-MOSFETs transistors will demonstrates the importance of using strain silicon technology especially in dual channel heterostructure MOSFET. The simulation of process and the extraction of the electronic proprieties in terms of transfer and output characteristics, transconductance, and the quasi-static capacitance allow understanding and interpreting these enhancements.

Author(s):

Amine Mohammed TABERKIT    
URMER research unit, university of Tlemcen
Algeria

Ahlam GUEN-BOUAZZA    
URMER research unit, university of Tlemcen
Algeria

 

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